Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method
CdS-Si heterojunction detector has been prepared by chemical bath deposition method . Structure properties of these films was characterized by X-ray diffraction .CdS films deposited have polycrystalline structure cubic(zinc blende) and hexagonal. The average grain size is 45 nm .The optical properti...
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| Format: | Article |
| Language: | English |
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University of Anbar
2013-08-01
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| Series: | مجلة جامعة الانبار للعلوم الصرفة |
| Subjects: | |
| Online Access: | https://juaps.uoanbar.edu.iq/article_81182_c63679b25ed7952df2519d4a4b4d4601.pdf |
| _version_ | 1797373311805554688 |
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| author | Hani H. Ahmed |
| author_facet | Hani H. Ahmed |
| author_sort | Hani H. Ahmed |
| collection | DOAJ |
| description | CdS-Si heterojunction detector has been prepared by chemical bath deposition method . Structure properties of these films was characterized by X-ray diffraction .CdS films deposited have polycrystalline structure cubic(zinc blende) and hexagonal. The average grain size is 45 nm .The optical properties of the CdS films have highly transmittance in visible region of spectrum and reach to more than 80 % with a wide band gap of 2.44 eV .Electrical properties of CdS-Si heterojunction have been investigated. The I-V characteristics under dark condition depict that good rectification behavior and exponential relationship for forward current biasing. The C-V measurements have shown that the heterojunction were of abrupt type and the build-in potential equal to 1.75V. The optoelectronic characteristics shows that CdS-Si detector has good spectral responsivity in the visible and the near infrared and show high sensitivity, in comparison with the conventional p-n silicon detectors. |
| first_indexed | 2024-03-08T18:48:36Z |
| format | Article |
| id | doaj.art-fb8747b972414481b842758e68d865a6 |
| institution | Directory Open Access Journal |
| issn | 1991-8941 2706-6703 |
| language | English |
| last_indexed | 2024-03-08T18:48:36Z |
| publishDate | 2013-08-01 |
| publisher | University of Anbar |
| record_format | Article |
| series | مجلة جامعة الانبار للعلوم الصرفة |
| spelling | doaj.art-fb8747b972414481b842758e68d865a62023-12-28T21:56:20ZengUniversity of Anbarمجلة جامعة الانبار للعلوم الصرفة1991-89412706-67032013-08-0163798410.37652/juaps.2012.8118281182Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition MethodHani H. Ahmed0Tikrit University - College of Science.CdS-Si heterojunction detector has been prepared by chemical bath deposition method . Structure properties of these films was characterized by X-ray diffraction .CdS films deposited have polycrystalline structure cubic(zinc blende) and hexagonal. The average grain size is 45 nm .The optical properties of the CdS films have highly transmittance in visible region of spectrum and reach to more than 80 % with a wide band gap of 2.44 eV .Electrical properties of CdS-Si heterojunction have been investigated. The I-V characteristics under dark condition depict that good rectification behavior and exponential relationship for forward current biasing. The C-V measurements have shown that the heterojunction were of abrupt type and the build-in potential equal to 1.75V. The optoelectronic characteristics shows that CdS-Si detector has good spectral responsivity in the visible and the near infrared and show high sensitivity, in comparison with the conventional p-n silicon detectors.https://juaps.uoanbar.edu.iq/article_81182_c63679b25ed7952df2519d4a4b4d4601.pdfcdssi heterojunctionchemical bath depositionstructural and optical propertiesv characteristicsv measurementspectral responsivity |
| spellingShingle | Hani H. Ahmed Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method مجلة جامعة الانبار للعلوم الصرفة cds si heterojunction chemical bath deposition structural and optical properties v characteristics v measurement spectral responsivity |
| title | Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method |
| title_full | Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method |
| title_fullStr | Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method |
| title_full_unstemmed | Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method |
| title_short | Study of Optoelectronic Properties CdS-Si Heterojunction Prepared by Chemical Bath Deposition Method |
| title_sort | study of optoelectronic properties cds si heterojunction prepared by chemical bath deposition method |
| topic | cds si heterojunction chemical bath deposition structural and optical properties v characteristics v measurement spectral responsivity |
| url | https://juaps.uoanbar.edu.iq/article_81182_c63679b25ed7952df2519d4a4b4d4601.pdf |
| work_keys_str_mv | AT hanihahmed studyofoptoelectronicpropertiescdssiheterojunctionpreparedbychemicalbathdepositionmethod |