Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe<sub>2</sub> for Artificial Synaptic Features

Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe<sub>2</sub> for Artificial Synaptic Features

The diversity of brain functions depend on the release of neurotransmitters in chemical synapses. The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the proficient neuromorphic computing systems. In order to...

Ful tanımlama

Detaylı Bibliyografya
Asıl Yazarlar: Shania Rehman, Muhammad Farooq Khan, Mehr Khalid Rahmani, Honggyun Kim, Harshada Patil, Sobia Ali Khan, Moon Hee Kang, Deok-kee Kim
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: MDPI AG 2020-11-01
Seri Bilgileri:Nanomaterials
Konular:
MoTe<sub>2</sub> transistor
chemical synapse
neuromorphic
charge trapping and artificial synaptic
Online Erişim:https://www.mdpi.com/2079-4991/10/12/2326

Internet

https://www.mdpi.com/2079-4991/10/12/2326

Benzer Materyaller