Deposition and Characterization of RP-ALD SiO<sub>2</sub> Thin Films with Different Oxygen Plasma Powers
In this study, silicon oxide (SiO<sub>2</sub>) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO<sub>2</sub> films. Post-...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-04-01
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Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/5/1173 |