Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study

Few-Layer Graphene as an Efficient Buffer for GaN/AlN Epitaxy on a SiO2/Si Substrate: A Joint Experimental and Theoret-ical Study

Single-layer (SLG)/few-layer (FLG) and multilayer graphene (MLG) (>15 layers) samples were obtained using the CVD method on high-textured Cu foil catalysts. In turn, plasma-assisted molecular beam epitaxy was applied to carry out the GaN graphene-assisted growth. A thin AlN layer was used at the...

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Bibliographic Details
Main Authors: Denis Petrovich Borisenko, Alexander Sergeevich Gusev, Nikolay Ivanovich Kargin, Petr Leonidovich Dobrokhotov, Alexey Afanasievich Timofeev, Vladimir Arkhipovich Labunov, Mikhail Mikhailovich Mikhalik, Konstantin Petrovich Katin, Mikhail Mikhailovich Maslov, Pavel Sergeevich Dzhumaev, Ivan Vladimirovich Komissarov
Format: Article
Language:English
Published: MDPI AG 2022-11-01
Series:Applied Sciences
Subjects:
GaN/AlN
molecular beam epitaxy
CVD graphene
buffer layer
gallium nitride
GaN-on-Si technology
Online Access:https://www.mdpi.com/2076-3417/12/22/11516

Internet

https://www.mdpi.com/2076-3417/12/22/11516

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