Dislocation-related leakage-current paths of 4H silicon carbide
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy. In this work, we compare the effect of different type of dislocations, and discriminate the effect...
| Κύριοι συγγραφείς: | , , , , , , , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
Frontiers Media S.A.
2023-01-01
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| Σειρά: | Frontiers in Materials |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.frontiersin.org/articles/10.3389/fmats.2023.1022878/full |