Electronic Structure and I-V Characteristics of InSe Nanoribbons

Electronic Structure and I-V Characteristics of InSe Nanoribbons

Abstract We have studied the electronic structure and the current-voltage (I-V) characteristics of one-dimensional InSe nanoribbons using the density functional theory combined with the nonequilibrium Green’s function method. Nanoribbons having bare or H-passivated edges of types zigzag (Z), Klein (...

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Bibliographic Details
Main Authors: A-Long Yao, Xue-Feng Wang, Yu-Shen Liu, Ya-Na Sun
Format: Article
Language:English
Published: SpringerOpen 2018-04-01
Series:Nanoscale Research Letters
Subjects:
InSe monolayer nanoribbon
Electronic structure
Negative differential resistance
Semiconductor-metal transition
Online Access:http://link.springer.com/article/10.1186/s11671-018-2517-2

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http://link.springer.com/article/10.1186/s11671-018-2517-2

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