Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor
A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO<sub>2</sub> is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/3/685 |