Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor
A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO<sub>2</sub> is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-03-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/3/685 |
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| author | Papanasam Esakki Prashanth Kumar Manikandan Esakki Adithya Venkatesh |
| author_facet | Papanasam Esakki Prashanth Kumar Manikandan Esakki Adithya Venkatesh |
| author_sort | Papanasam Esakki |
| collection | DOAJ |
| description | A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO<sub>2</sub> is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the source side of the channel. Physical and electrical characteristics of the proposed device are compared with conventional double gate Schottky barrier MOSFET. It has been observed that the proposed device exhibits better performance, with a higher I<sub>ON</sub>/I<sub>OFF</sub> ratio and lower subthreshold slope. The high-κ dielectric, along with the SiGe pocket region, improves tunneling probability, while aluminum, along with SiO<sub>2</sub> at the drain side, broadens the drain/channel Schottky barrier and reduces the hole tunneling probability, resulting in a reduced OFF-state current. Further, the proposed device is used as a biosensor to detect both the charged and neutral biomolecules. Biosensors are made by creating a nanocavity in the dielectric region near the source end of the channel to capture biomolecules. Biomolecules such as streptavidin, biotin, APTES, cellulose and DNA have unique dielectric constants, which modulates the electrical parameters of the device. Different electrical parameters, viz., the electric field, surface potential and drain current, are analyzed for each biomolecule. It has been observed that drain current increases with the dielectric constant of the biomolecules. Furthermore, the sensitivity and selectivity of the proposed biosensors is better than that of conventional biosensors made using double gate Schottky barrier MOSFETs. Sensitivity is almost twice that of a conventional sensor, while selectivity is six to twelve times higher than a conventional one. |
| first_indexed | 2024-03-11T06:09:51Z |
| format | Article |
| id | doaj.art-fbe80faac4b04e9aa69bed00737d5730 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T06:09:51Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-fbe80faac4b04e9aa69bed00737d57302023-11-17T12:44:15ZengMDPI AGMicromachines2072-666X2023-03-0114368510.3390/mi14030685Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET BiosensorPapanasam Esakki0Prashanth Kumar1Manikandan Esakki2Adithya Venkatesh3School of Electronics Engineering, Vellore Institute of Technology Chennai Campus, Chennai 600 127, IndiaSchool of Electronics Engineering, Vellore Institute of Technology Chennai Campus, Chennai 600 127, IndiaCentre for Innovation and Product Development (CIPD), Vellore Institute of Technology Chennai Campus, Chennai 600 127, IndiaSchool of Electronics Engineering, Vellore Institute of Technology Chennai Campus, Chennai 600 127, IndiaA novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO<sub>2</sub> is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the source side of the channel. Physical and electrical characteristics of the proposed device are compared with conventional double gate Schottky barrier MOSFET. It has been observed that the proposed device exhibits better performance, with a higher I<sub>ON</sub>/I<sub>OFF</sub> ratio and lower subthreshold slope. The high-κ dielectric, along with the SiGe pocket region, improves tunneling probability, while aluminum, along with SiO<sub>2</sub> at the drain side, broadens the drain/channel Schottky barrier and reduces the hole tunneling probability, resulting in a reduced OFF-state current. Further, the proposed device is used as a biosensor to detect both the charged and neutral biomolecules. Biosensors are made by creating a nanocavity in the dielectric region near the source end of the channel to capture biomolecules. Biomolecules such as streptavidin, biotin, APTES, cellulose and DNA have unique dielectric constants, which modulates the electrical parameters of the device. Different electrical parameters, viz., the electric field, surface potential and drain current, are analyzed for each biomolecule. It has been observed that drain current increases with the dielectric constant of the biomolecules. Furthermore, the sensitivity and selectivity of the proposed biosensors is better than that of conventional biosensors made using double gate Schottky barrier MOSFETs. Sensitivity is almost twice that of a conventional sensor, while selectivity is six to twelve times higher than a conventional one.https://www.mdpi.com/2072-666X/14/3/685dielectric modulationSchottky barrierquad gatebiosensorMOSFET |
| spellingShingle | Papanasam Esakki Prashanth Kumar Manikandan Esakki Adithya Venkatesh Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor Micromachines dielectric modulation Schottky barrier quad gate biosensor MOSFET |
| title | Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor |
| title_full | Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor |
| title_fullStr | Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor |
| title_full_unstemmed | Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor |
| title_short | Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor |
| title_sort | improved dielectrically modulated quad gate schottky barrier mosfet biosensor |
| topic | dielectric modulation Schottky barrier quad gate biosensor MOSFET |
| url | https://www.mdpi.com/2072-666X/14/3/685 |
| work_keys_str_mv | AT papanasamesakki improveddielectricallymodulatedquadgateschottkybarriermosfetbiosensor AT prashanthkumar improveddielectricallymodulatedquadgateschottkybarriermosfetbiosensor AT manikandanesakki improveddielectricallymodulatedquadgateschottkybarriermosfetbiosensor AT adithyavenkatesh improveddielectricallymodulatedquadgateschottkybarriermosfetbiosensor |