Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor

Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor

A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO<sub>2</sub> is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region...

Full description

Bibliographic Details
Main Authors: Papanasam Esakki, Prashanth Kumar, Manikandan Esakki, Adithya Venkatesh
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Micromachines
Subjects:
dielectric modulation
Schottky barrier
quad gate
biosensor
MOSFET
Online Access:https://www.mdpi.com/2072-666X/14/3/685

Similar Items

Similar Items