Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications

Gate Grounded Trench I-MOS as an ESD Clamp for Sub-2V Applications

In this paper, using calibrated 2-D simulations we have reported a new gate grounded trench impact ionization MOS (GGTIMOS) electrostatic discharge (ESD) protection device for sub-2V operating voltage applications. The proposed GGTIMOS ESD device exhibits ~3x, and ~1.75x reduct...

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Bibliographic Details
Main Authors: Avinash Lahgere, Dhruv Shikhar Gupta
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Electrostatic discharge (ESD)
impact ionization MOS (I-MOS)
GGNMOS
trigger voltage
human body model
impact ionization
Online Access:https://ieeexplore.ieee.org/document/10271368/

Internet

https://ieeexplore.ieee.org/document/10271368/

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