A 3 kW GaN HEMT Based Three-Phase Converter Achieving a Switching Frequency of 300 kHz and an Efficiency of 97.06%

A 3 kW GaN HEMT Based Three-Phase Converter Achieving a Switching Frequency of 300 kHz and an Efficiency of 97.06%

With wider electrification in various sectors, there is a great demand for high-power, high-efficiency and high-power-density converters. Compared with conventional Si devices, the ultra-fast-switching speed of gallium nitride (GaN) high-electron-mobility-transistors (HEMTs) can enable power electro...

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Bibliographic Details
Main Authors: Zihao Wang, Fei Ye, Shunshuai Duan, Xibo Yuan, Dongsheng Zuo, Yonglei Zhang, Kai Wang, Yan Li
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
DC/AC converter
efficiency
GaN HEMT
switching frequency
Online Access:https://ieeexplore.ieee.org/document/10637470/

Internet

https://ieeexplore.ieee.org/document/10637470/

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