Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN<i>x</i> as a Gate Dielectric

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN<i>x</i> as a Gate Dielectric

In this paper, SiN<i>x</i> film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH<sub>3</sub> flow during the deposition of SiN<i>x</i> can signifi...

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Bibliographic Details
Main Authors: Xiaohui Gao, Hui Guo, Rui Wang, Danfeng Pan, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Micromachines
Subjects:
PECVD-SiN<i>x</i>
AlGaN/GaN
MIS-HEMTs
in situ plasma treatment
breakdown field
Online Access:https://www.mdpi.com/2072-666X/13/9/1396

Internet

https://www.mdpi.com/2072-666X/13/9/1396

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