Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature

Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature

Abstract Over the past several decades, major efforts have been directed toward the optimization of carrier concentrations to maximize thermoelectric performance. Chemical doping is an effective way to control carriers, but electrostatic gating provides a continuous tuning knob that enables effectiv...

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Bibliographic Details
Main Authors: Arindom Chatterjee, Carlos Nunez Lobato, Victor Rosendal, Thomas Aarøe Anhøj, Jean‐Claude Grivel, Felix Trier, Dennis Valbjørn Christensen, Nini Pryds
Format: Article
Language:English
Published: Wiley-VCH 2024-03-01
Series:Advanced Electronic Materials
Subjects:
and thermoelectric power factor
electric‐double‐layer transistors
ionic liquid gating
Nb‐doped SrTiO3 thin films
Online Access:https://doi.org/10.1002/aelm.202300683

Internet

https://doi.org/10.1002/aelm.202300683

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