Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature
Abstract Over the past several decades, major efforts have been directed toward the optimization of carrier concentrations to maximize thermoelectric performance. Chemical doping is an effective way to control carriers, but electrostatic gating provides a continuous tuning knob that enables effectiv...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-03-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300683 |
| _version_ | 1797270046884495360 |
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| author | Arindom Chatterjee Carlos Nunez Lobato Victor Rosendal Thomas Aarøe Anhøj Jean‐Claude Grivel Felix Trier Dennis Valbjørn Christensen Nini Pryds |
| author_facet | Arindom Chatterjee Carlos Nunez Lobato Victor Rosendal Thomas Aarøe Anhøj Jean‐Claude Grivel Felix Trier Dennis Valbjørn Christensen Nini Pryds |
| author_sort | Arindom Chatterjee |
| collection | DOAJ |
| description | Abstract Over the past several decades, major efforts have been directed toward the optimization of carrier concentrations to maximize thermoelectric performance. Chemical doping is an effective way to control carriers, but electrostatic gating provides a continuous tuning knob that enables effective and dynamic changes to the carrier density. Here, a method is reported that uses an electric‐double‐layer (EDL) transistor‐based ionic liquids gating to adjust the thermoelectric properties of thin films made from Nb‐doped SrTiO3 (Nb‐STO). This technique allows us to effectively change these properties at room temperature by varying the concentration of charge carriers within a broad range. A combination of lower film thickness and intrinsic carrier concentration leads to an enhanced ionic liquid‐gated response, resulting in an 18‐fold enhancement in power factor at room temperature for a 14 nm thin 4% Nb‐STO film at gate voltages within ±3.0 V. The present study offers new insights and strategies toward enhanced gate tunable thermoelectric properties in thin films. |
| first_indexed | 2024-04-25T01:58:03Z |
| format | Article |
| id | doaj.art-fc8dbadf311e4250be02cf2e9aa1e3f6 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-04-25T01:58:03Z |
| publishDate | 2024-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-fc8dbadf311e4250be02cf2e9aa1e3f62024-03-07T15:46:04ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-03-01103n/an/a10.1002/aelm.202300683Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room TemperatureArindom Chatterjee0Carlos Nunez Lobato1Victor Rosendal2Thomas Aarøe Anhøj3Jean‐Claude Grivel4Felix Trier5Dennis Valbjørn Christensen6Nini Pryds7Department of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkDepartment of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkDepartment of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkDepartment of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkDepartment of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkDepartment of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkDepartment of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkDepartment of Energy Conversion and Storage DTU Nanolab Technical University of Denmark Lyngby Kongens 2800 DenmarkAbstract Over the past several decades, major efforts have been directed toward the optimization of carrier concentrations to maximize thermoelectric performance. Chemical doping is an effective way to control carriers, but electrostatic gating provides a continuous tuning knob that enables effective and dynamic changes to the carrier density. Here, a method is reported that uses an electric‐double‐layer (EDL) transistor‐based ionic liquids gating to adjust the thermoelectric properties of thin films made from Nb‐doped SrTiO3 (Nb‐STO). This technique allows us to effectively change these properties at room temperature by varying the concentration of charge carriers within a broad range. A combination of lower film thickness and intrinsic carrier concentration leads to an enhanced ionic liquid‐gated response, resulting in an 18‐fold enhancement in power factor at room temperature for a 14 nm thin 4% Nb‐STO film at gate voltages within ±3.0 V. The present study offers new insights and strategies toward enhanced gate tunable thermoelectric properties in thin films.https://doi.org/10.1002/aelm.202300683and thermoelectric power factorelectric‐double‐layer transistorsionic liquid gatingNb‐doped SrTiO3 thin films |
| spellingShingle | Arindom Chatterjee Carlos Nunez Lobato Victor Rosendal Thomas Aarøe Anhøj Jean‐Claude Grivel Felix Trier Dennis Valbjørn Christensen Nini Pryds Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature Advanced Electronic Materials and thermoelectric power factor electric‐double‐layer transistors ionic liquid gating Nb‐doped SrTiO3 thin films |
| title | Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature |
| title_full | Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature |
| title_fullStr | Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature |
| title_full_unstemmed | Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature |
| title_short | Gate‐tunable Thermoelectric Effect in Oxide Thin Films at Room Temperature |
| title_sort | gate tunable thermoelectric effect in oxide thin films at room temperature |
| topic | and thermoelectric power factor electric‐double‐layer transistors ionic liquid gating Nb‐doped SrTiO3 thin films |
| url | https://doi.org/10.1002/aelm.202300683 |
| work_keys_str_mv | AT arindomchatterjee gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature AT carlosnunezlobato gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature AT victorrosendal gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature AT thomasaarøeanhøj gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature AT jeanclaudegrivel gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature AT felixtrier gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature AT dennisvalbjørnchristensen gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature AT ninipryds gatetunablethermoelectriceffectinoxidethinfilmsatroomtemperature |