Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT

This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear de...

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Bibliographic Details
Main Authors: Jie Jiang, Qiuqi Chen, Shengdong Hu, Yijun Shi, Zhiyuan He, Yun Huang, Caixin Hui, Yiqiang Chen, Hao Wu, Guoguang Lu
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Materials
Subjects:
AlGaN/GaN
HEMT
electro-thermo-mechanical coupling
COMSOL
Online Access:https://www.mdpi.com/1996-1944/16/4/1484

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https://www.mdpi.com/1996-1944/16/4/1484

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