First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology

Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and high electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrie...

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Bibliographic Details
Main Authors: Yue Sun, Xuanwu Kang, Shixiong Deng, Yingkui Zheng, Ke Wei, Linwang Xu, Hao Wu, Xinyu Liu
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Electronics
Subjects:
vertical
GaN SBD
L band
Schottky diode limiter
high power
Online Access:https://www.mdpi.com/2079-9292/10/4/433

Internet

https://www.mdpi.com/2079-9292/10/4/433

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