GaN/AlN Multi-Quantum Wells Infrared Detector with Short-Wave Infrared Response at Room Temperature
GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 nm/1.8 nm) multi-quantum wells have been epitaxially grown on sapphire substrate using MBE technology. Meanwhile, based o...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-06-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/22/11/4239 |