THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEW

Abstract. Considered the problems that do not allow to fully realize the enormous potential of application of indium phosphide and gallium arsenide in solid-state electronics.The classical and modern results of the thermal oxidation of AIIIBV semiconductors with consideration of process stimulation...

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Main Authors: Elena V. Tominа, Irina Y. Mittova, Lidiya S. Zelenina
Format: Article
Language:English
Published: Voronezh State University 2018-03-01
Series:Конденсированные среды и межфазные границы
Subjects:
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author Elena V. Tominа
Irina Y. Mittova
Lidiya S. Zelenina
author_facet Elena V. Tominа
Irina Y. Mittova
Lidiya S. Zelenina
author_sort Elena V. Tominа
collection DOAJ
description Abstract. Considered the problems that do not allow to fully realize the enormous potential of application of indium phosphide and gallium arsenide in solid-state electronics.The classical and modern results of the thermal oxidation of AIIIBV semiconductors with consideration of process stimulation by photon processing, magnetic pulses, etc. are analyzed and generalized. Particular attention is paid to the fundamental approach to solving the problem of the formation of nanoscale functional fi lms on AIIIBV, consisting in the use of reasonably selected chemical stimulators introduced into the system in various ways with the aim of changing the mechanism of the thermal oxidation process of semiconductors to chemical stimulated. This ensures the occurrence of new interface reactions with kinetically conjugated and heterogeneously catalytic stages, which in a single process allows: 1) to block the negative communication channel between the reactions of componentwise oxidation under thermal oxidation of pure AIIIBV; 2) acceleration of the fi lms formation in comparison with the process of pure AIIIBVoxidation, including branching through the products of the chemical stimulator conversion; 3) lowering the operating parameters of the process (temperature, time) and preventing degradation of the fi lms; 4) purposeful changes in the composition and properties of the nanoscale fi lms with the achievement of target characteristics. Deposited on the GaAs and InP surface nanoscale layers of d-metals (Ni, Co, and V) have a purposeful multifunctional effect on the composition and properties of the formed fi lms, changing the mechanism of the thermal oxidation of semiconductors from mechanism of pure AIIIBV oxidation to transit or catalytic. Effective kinetic and chemical blocking of the negative communication channel between the stages of pure InP and GaAs oxidationby used of a chemical stimulator prevents the diffusion of unoxidized indium into fi lms (0.3-0.5 % In versus 17 % native oxide, LE, XRD, IRS, USXRES data), segregation arsenic at the inner interface (the content of As in the form of As2O3, As2O5, [AsO4]3- increases 2-5 times XRD, IRS, and USXRES data) and provides the formation of nanoscale fi lms with semiconductor and dielectric characteristics (electrical strength up to 7 × 106 V/cm).
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spelling doaj.art-fcdd30f79070436d956792c04dccbac62022-12-21T23:20:20ZengVoronezh State UniversityКонденсированные среды и межфазные границы1606-867X1606-867X2018-03-0120162410.17308/kcmf.2018.20/472THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEWElena V. Tominа0Irina Y. Mittova1Lidiya S. Zelenina2Dr. Sci. (Chem.), Associate Professor, Department of Materials Science and Industry of Nanosystems, Voronezh State UniversityDr. Sci. (Chem.), Professor, Professor of the Department of Materials Science and Industry of Nanosystems, Voronezh State Universitypostgraduate of the Department of Materials Science and Industry of Nanosystems, Voronezh State UniversityAbstract. Considered the problems that do not allow to fully realize the enormous potential of application of indium phosphide and gallium arsenide in solid-state electronics.The classical and modern results of the thermal oxidation of AIIIBV semiconductors with consideration of process stimulation by photon processing, magnetic pulses, etc. are analyzed and generalized. Particular attention is paid to the fundamental approach to solving the problem of the formation of nanoscale functional fi lms on AIIIBV, consisting in the use of reasonably selected chemical stimulators introduced into the system in various ways with the aim of changing the mechanism of the thermal oxidation process of semiconductors to chemical stimulated. This ensures the occurrence of new interface reactions with kinetically conjugated and heterogeneously catalytic stages, which in a single process allows: 1) to block the negative communication channel between the reactions of componentwise oxidation under thermal oxidation of pure AIIIBV; 2) acceleration of the fi lms formation in comparison with the process of pure AIIIBVoxidation, including branching through the products of the chemical stimulator conversion; 3) lowering the operating parameters of the process (temperature, time) and preventing degradation of the fi lms; 4) purposeful changes in the composition and properties of the nanoscale fi lms with the achievement of target characteristics. Deposited on the GaAs and InP surface nanoscale layers of d-metals (Ni, Co, and V) have a purposeful multifunctional effect on the composition and properties of the formed fi lms, changing the mechanism of the thermal oxidation of semiconductors from mechanism of pure AIIIBV oxidation to transit or catalytic. Effective kinetic and chemical blocking of the negative communication channel between the stages of pure InP and GaAs oxidationby used of a chemical stimulator prevents the diffusion of unoxidized indium into fi lms (0.3-0.5 % In versus 17 % native oxide, LE, XRD, IRS, USXRES data), segregation arsenic at the inner interface (the content of As in the form of As2O3, As2O5, [AsO4]3- increases 2-5 times XRD, IRS, and USXRES data) and provides the formation of nanoscale fi lms with semiconductor and dielectric characteristics (electrical strength up to 7 × 106 V/cm).indium phosphidegallium arsenidethermooxidationchemostimulatornanoscale range fi lms.
spellingShingle Elena V. Tominа
Irina Y. Mittova
Lidiya S. Zelenina
THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEW
Конденсированные среды и межфазные границы
indium phosphide
gallium arsenide
thermooxidation
chemostimulator
nanoscale range fi lms.
title THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEW
title_full THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEW
title_fullStr THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEW
title_full_unstemmed THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEW
title_short THERMAL OXIDATION AS A METHOD OF FORMATION OF NANOSCALE FUNCTIONAL FILMS ON AIIIBV SEMICONDUCTORS: INFLUENCE OF DEPOSITED METAL LAYERS OVERVIEW
title_sort thermal oxidation as a method of formation of nanoscale functional films on aiiibv semiconductors influence of deposited metal layers overview
topic indium phosphide
gallium arsenide
thermooxidation
chemostimulator
nanoscale range fi lms.
work_keys_str_mv AT elenavtomina thermaloxidationasamethodofformationofnanoscalefunctionalfilmsonaiiibvsemiconductorsinfluenceofdepositedmetallayersoverview
AT irinaymittova thermaloxidationasamethodofformationofnanoscalefunctionalfilmsonaiiibvsemiconductorsinfluenceofdepositedmetallayersoverview
AT lidiyaszelenina thermaloxidationasamethodofformationofnanoscalefunctionalfilmsonaiiibvsemiconductorsinfluenceofdepositedmetallayersoverview