Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap
Underlap between gate and drain/source area is one of the important items non-ideal effects in the device manufacturing process in the nanometer scale. In this paper, for the first time, the effect of underlap between the gate and drain/source area for tunneling carbon nanotube field effects transis...
| Main Authors: | , |
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| Format: | Article |
| Language: | fas |
| Published: |
Semnan University
2019-12-01
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| Series: | مجله مدل سازی در مهندسی |
| Subjects: | |
| Online Access: | https://modelling.semnan.ac.ir/article_4161_07b040071f9fe23f59e6ad4b1de5444e.pdf |