Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap
Underlap between gate and drain/source area is one of the important items non-ideal effects in the device manufacturing process in the nanometer scale. In this paper, for the first time, the effect of underlap between the gate and drain/source area for tunneling carbon nanotube field effects transis...
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| Format: | Article |
| Language: | fas |
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Semnan University
2019-12-01
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| Series: | مجله مدل سازی در مهندسی |
| Subjects: | |
| Online Access: | https://modelling.semnan.ac.ir/article_4161_07b040071f9fe23f59e6ad4b1de5444e.pdf |
| _version_ | 1827342373763416064 |
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| author | Ali Naderi Maryam Ghodrati |
| author_facet | Ali Naderi Maryam Ghodrati |
| author_sort | Ali Naderi |
| collection | DOAJ |
| description | Underlap between gate and drain/source area is one of the important items non-ideal effects in the device manufacturing process in the nanometer scale. In this paper, for the first time, the effect of underlap between the gate and drain/source area for tunneling carbon nanotube field effects transistor is investigated. To simulate the device, self- consistent solution of Schrodinger and Poisson equations and Non-equilibrium Green’s Function method have been employed. The function of the device is evaluated in terms of the on-state current, off-state current, current ratio, sub-threshold swing, delay time, and the power delay product. The simulation results show that the underlap effect improves some of the device characteristics and has some adverse effects on other characteristics. In the case where the length of underlap area is optimally chosen, the device performance will be improved considerably. Simulation results indicate that underlap significantly reduces the off-state current and thus reduces band-to-band tunneling and ambipolar behavior of the device. Also, the underlap effect by improving the power delay product parameter is a suitable option for low power applications compared with the conventional structure. |
| first_indexed | 2024-03-07T22:06:46Z |
| format | Article |
| id | doaj.art-fcec5c4a1c564529b121e6843958ff0b |
| institution | Directory Open Access Journal |
| issn | 2008-4854 2783-2538 |
| language | fas |
| last_indexed | 2024-03-07T22:06:46Z |
| publishDate | 2019-12-01 |
| publisher | Semnan University |
| record_format | Article |
| series | مجله مدل سازی در مهندسی |
| spelling | doaj.art-fcec5c4a1c564529b121e6843958ff0b2024-02-23T19:07:03ZfasSemnan Universityمجله مدل سازی در مهندسی2008-48542783-25382019-12-01175921522410.22075/jme.2019.17482.17044161Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of UnderlapAli Naderi0Maryam Ghodrati1Electrical engineering department, Energy faculty, Kermanshah University of TechnologyElectrical engineering department, Engineering Faculty, Lorestan UniversityUnderlap between gate and drain/source area is one of the important items non-ideal effects in the device manufacturing process in the nanometer scale. In this paper, for the first time, the effect of underlap between the gate and drain/source area for tunneling carbon nanotube field effects transistor is investigated. To simulate the device, self- consistent solution of Schrodinger and Poisson equations and Non-equilibrium Green’s Function method have been employed. The function of the device is evaluated in terms of the on-state current, off-state current, current ratio, sub-threshold swing, delay time, and the power delay product. The simulation results show that the underlap effect improves some of the device characteristics and has some adverse effects on other characteristics. In the case where the length of underlap area is optimally chosen, the device performance will be improved considerably. Simulation results indicate that underlap significantly reduces the off-state current and thus reduces band-to-band tunneling and ambipolar behavior of the device. Also, the underlap effect by improving the power delay product parameter is a suitable option for low power applications compared with the conventional structure.https://modelling.semnan.ac.ir/article_4161_07b040071f9fe23f59e6ad4b1de5444e.pdfleakage currentpower delay producttunneling carbon nanotube field effects transistornon-equilibrium green’s function (negf) |
| spellingShingle | Ali Naderi Maryam Ghodrati Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap مجله مدل سازی در مهندسی leakage current power delay product tunneling carbon nanotube field effects transistor non-equilibrium green’s function (negf) |
| title | Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap |
| title_full | Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap |
| title_fullStr | Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap |
| title_full_unstemmed | Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap |
| title_short | Improvement in the Performance of Tunneling Carbon Nanotube Field Effects Transistor in Presence of Underlap |
| title_sort | improvement in the performance of tunneling carbon nanotube field effects transistor in presence of underlap |
| topic | leakage current power delay product tunneling carbon nanotube field effects transistor non-equilibrium green’s function (negf) |
| url | https://modelling.semnan.ac.ir/article_4161_07b040071f9fe23f59e6ad4b1de5444e.pdf |
| work_keys_str_mv | AT alinaderi improvementintheperformanceoftunnelingcarbonnanotubefieldeffectstransistorinpresenceofunderlap AT maryamghodrati improvementintheperformanceoftunnelingcarbonnanotubefieldeffectstransistorinpresenceofunderlap |