Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films
MEMS (micro electro-mechanical systems) operated in resonance and excited piezoelectrically are nowadays used for a broad range of different application scenarios. To enhance the process stability and hence, the reproducibility of key film parameters of sputter-deposited aluminium nitride such as th...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2018-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/aac9db |
| _version_ | 1797747281714216960 |
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| author | M Fischeneder A Bittner M Schneider U Schmid |
| author_facet | M Fischeneder A Bittner M Schneider U Schmid |
| author_sort | M Fischeneder |
| collection | DOAJ |
| description | MEMS (micro electro-mechanical systems) operated in resonance and excited piezoelectrically are nowadays used for a broad range of different application scenarios. To enhance the process stability and hence, the reproducibility of key film parameters of sputter-deposited aluminium nitride such as the film stress, the piezoelectric coefficient d _33 and low leakage current levels, a novel aluminium clamped substrate holder is reported. Compared to the standard molybdenum based solution, where the thermal contact between the wafer and substrate holder varies during deposition, as the wafer can move freely, the substrate temperature variations are substantially reduced due to clamped configuration. Independent of AlN film thickness ranging between 0.5 μ m and 2.0 μ m the scatter in piezoelectric constant d _33 and leakage current characteristics represented by the barrier height and the activation energy is reduced up to a factor of 3. These results demonstrate the importance to control carefully the temperature conditions during low-temperature AlN deposition to ensure a high reproducibility in film properties. |
| first_indexed | 2024-03-12T15:48:30Z |
| format | Article |
| id | doaj.art-fcf04d8e46d04b638e9f229da92d3dd9 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:48:30Z |
| publishDate | 2018-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-fcf04d8e46d04b638e9f229da92d3dd92023-08-09T15:20:03ZengIOP PublishingMaterials Research Express2053-15912018-01-015606641210.1088/2053-1591/aac9dbEnhanced process stability for the low temperature sputter deposition of aluminium nitride thin filmsM Fischeneder0https://orcid.org/0000-0002-5514-3880A Bittner1M Schneider2U Schmid3Institute of Sensor and Actuator Systems , TU Wien, Gusshausstrasse 27-29, 1040 Vienna, AustriaInstitute of Sensor and Actuator Systems , TU Wien, Gusshausstrasse 27-29, 1040 Vienna, AustriaInstitute of Sensor and Actuator Systems , TU Wien, Gusshausstrasse 27-29, 1040 Vienna, AustriaInstitute of Sensor and Actuator Systems , TU Wien, Gusshausstrasse 27-29, 1040 Vienna, AustriaMEMS (micro electro-mechanical systems) operated in resonance and excited piezoelectrically are nowadays used for a broad range of different application scenarios. To enhance the process stability and hence, the reproducibility of key film parameters of sputter-deposited aluminium nitride such as the film stress, the piezoelectric coefficient d _33 and low leakage current levels, a novel aluminium clamped substrate holder is reported. Compared to the standard molybdenum based solution, where the thermal contact between the wafer and substrate holder varies during deposition, as the wafer can move freely, the substrate temperature variations are substantially reduced due to clamped configuration. Independent of AlN film thickness ranging between 0.5 μ m and 2.0 μ m the scatter in piezoelectric constant d _33 and leakage current characteristics represented by the barrier height and the activation energy is reduced up to a factor of 3. These results demonstrate the importance to control carefully the temperature conditions during low-temperature AlN deposition to ensure a high reproducibility in film properties.https://doi.org/10.1088/2053-1591/aac9dbd33leakage currentpiezoelectric coefficientAlNthin film depositionclamped substrate holder |
| spellingShingle | M Fischeneder A Bittner M Schneider U Schmid Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films Materials Research Express d33 leakage current piezoelectric coefficient AlN thin film deposition clamped substrate holder |
| title | Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films |
| title_full | Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films |
| title_fullStr | Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films |
| title_full_unstemmed | Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films |
| title_short | Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films |
| title_sort | enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films |
| topic | d33 leakage current piezoelectric coefficient AlN thin film deposition clamped substrate holder |
| url | https://doi.org/10.1088/2053-1591/aac9db |
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