Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica

Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica

Abstract In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowir...

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Bibliographic Details
Main Authors: Aditya Prabaswara, Jung-Wook Min, Ram Chandra Subedi, Malleswararao Tangi, Jorge A. Holguin-Lerma, Chao Zhao, Davide Priante, Tien Khee Ng, Boon S. Ooi
Format: Article
Language:English
Published: SpringerOpen 2019-02-01
Series:Nanoscale Research Letters
Subjects:
Nanowires
Gallium nitride
Silica
Indium tin oxide
Online Access:http://link.springer.com/article/10.1186/s11671-019-2870-9

Internet

http://link.springer.com/article/10.1186/s11671-019-2870-9

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