High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Abstract Achieving high-efficient spin injection in semiconductors is critical for developing spintronic devices. Although a tunnel spin injector is typically used, the construction of a high-quality tunnel barrier remains a significant challenge due to the large lattice mismatch between oxides and...

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Bibliographic Details
Main Authors: Di Lin, Wenyu Kang, Qipeng Wu, Anke Song, Xuefeng Wu, Guozhen Liu, Jianfeng Wu, Yaping Wu, Xu Li, Zhiming Wu, Duanjun Cai, Jun Yin, Junyong Kang
Format: Article
Language:English
Published: SpringerOpen 2022-08-01
Series:Nanoscale Research Letters
Subjects:
Van der Waals tunnelling barrier
Boron nitride
Spin injection
Spintronic devices
Online Access:https://doi.org/10.1186/s11671-022-03712-5

Internet

https://doi.org/10.1186/s11671-022-03712-5

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