Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication

Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication

In this study, we conducted an optimization of a low-damage selective etching process utilizing inductively coupled plasma-reactive ion etch (ICP-RIE) with a fluorine-based gas mixture. This optimization was carried out for the fabrication of p-GaN gated AlGaN/GaN enhancement-mode (E-mode) heterojun...

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Bibliographic Details
Main Authors: Hyeon-Ji Kim, Jun-Hyeok Yim, Hyungtak Kim, Ho-Young Cha
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Electronics
Subjects:
p-GaN
AlGaN/GaN heterojunction
enhancement mode
selective etching
fluorine
Online Access:https://www.mdpi.com/2079-9292/12/20/4347

Internet

https://www.mdpi.com/2079-9292/12/20/4347

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