Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy
Thin films of GaAs1 – x – yNxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mix...
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| Format: | Article |
| Language: | English |
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Saratov State University
2023-12-01
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| Series: | Известия Саратовского университета. Новая серия Серия: Физика |
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| Online Access: | https://fizika.sgu.ru/sites/fizika.sgu.ru/files/text-pdf/2023/12/fizika_2023_4-76-81.pdf |