Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy
Thin films of GaAs1 – x – yNxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mix...
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| Format: | Article |
| Language: | English |
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Saratov State University
2023-12-01
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| Series: | Известия Саратовского университета. Новая серия Серия: Физика |
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| Online Access: | https://fizika.sgu.ru/sites/fizika.sgu.ru/files/text-pdf/2023/12/fizika_2023_4-76-81.pdf |
| _version_ | 1827399055500640256 |
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| author | Devitsky, Oleg V. |
| author_facet | Devitsky, Oleg V. |
| author_sort | Devitsky, Oleg V. |
| collection | DOAJ |
| description | Thin films of GaAs1 – x – yNxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from 20 Pa to 60 Pa due to reflection and scattering of the plasma torch flow on nitrogen and argon atoms. The increase in pressure results in a significant decrease in the size and density of droplets on the film surface. All samples exhibit a polycrystalline structure, and the film obtained at a pressure of 60 Pa exhibits the highest crystalline perfection. The VASP software package was used to calculate theoretically the diffractogram for a (2×2×2) GaAs0.889N0.037Bi0.074 supercell, and it has been observed that the width at half maximum intensity for the GaAsNBi (004) reflection decreases with increasing pressure of the argon-nitrogen gas mixture. The nitrogen concentration in the thin film is found to increase linearly with the increase in the pressure of the argon-nitrogen gas mixture, which was established using X-ray diffraction and photoluminescence methods. The composition of the film obtained at a pressure of 60 Pa is determined to be GaAs0.957N0.012Bi0.021. |
| first_indexed | 2024-03-08T19:39:00Z |
| format | Article |
| id | doaj.art-fd89c49d84e5427198a5f9b57df2f611 |
| institution | Directory Open Access Journal |
| issn | 1817-3020 2542-193X |
| language | English |
| last_indexed | 2024-03-08T19:39:00Z |
| publishDate | 2023-12-01 |
| publisher | Saratov State University |
| record_format | Article |
| series | Известия Саратовского университета. Новая серия Серия: Физика |
| spelling | doaj.art-fd89c49d84e5427198a5f9b57df2f6112023-12-25T15:08:00ZengSaratov State UniversityИзвестия Саратовского университета. Новая серия Серия: Физика1817-30202542-193X2023-12-0123436537010.18500/1817-3020-2023-23-4-365-370Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiyDevitsky, Oleg V.0Federal Research Center the Southern Scientific Centre of the Russian Academy of Sciences, 41 Chekhov St., Rostov-on-Don 344006, RussiaThin films of GaAs1 – x – yNxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from 20 Pa to 60 Pa due to reflection and scattering of the plasma torch flow on nitrogen and argon atoms. The increase in pressure results in a significant decrease in the size and density of droplets on the film surface. All samples exhibit a polycrystalline structure, and the film obtained at a pressure of 60 Pa exhibits the highest crystalline perfection. The VASP software package was used to calculate theoretically the diffractogram for a (2×2×2) GaAs0.889N0.037Bi0.074 supercell, and it has been observed that the width at half maximum intensity for the GaAsNBi (004) reflection decreases with increasing pressure of the argon-nitrogen gas mixture. The nitrogen concentration in the thin film is found to increase linearly with the increase in the pressure of the argon-nitrogen gas mixture, which was established using X-ray diffraction and photoluminescence methods. The composition of the film obtained at a pressure of 60 Pa is determined to be GaAs0.957N0.012Bi0.021.https://fizika.sgu.ru/sites/fizika.sgu.ru/files/text-pdf/2023/12/fizika_2023_4-76-81.pdfthin filmspulsed laser depositioniii–v-n-bigaas1 – x – ynxbiyx-ray diffractionscanning electron microscopy |
| spellingShingle | Devitsky, Oleg V. Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy Известия Саратовского университета. Новая серия Серия: Физика thin films pulsed laser deposition iii–v-n-bi gaas1 – x – ynxbiy x-ray diffraction scanning electron microscopy |
| title | Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy |
| title_full | Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy |
| title_fullStr | Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy |
| title_full_unstemmed | Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy |
| title_short | Effect of nitrogen pressure on the composition and structure of thin films GaAs1 – x – yNxBiy |
| title_sort | effect of nitrogen pressure on the composition and structure of thin films gaas1 x ynxbiy |
| topic | thin films pulsed laser deposition iii–v-n-bi gaas1 – x – ynxbiy x-ray diffraction scanning electron microscopy |
| url | https://fizika.sgu.ru/sites/fizika.sgu.ru/files/text-pdf/2023/12/fizika_2023_4-76-81.pdf |
| work_keys_str_mv | AT devitskyolegv effectofnitrogenpressureonthecompositionandstructureofthinfilmsgaas1xynxbiy |