Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

<p>Abstract</p><p>The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband...

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Bibliographic Details
Main Authors: Tomm JW, Elsaesser T, Talalaev VG, Cirlin GE, Tonkikh AA, Zakharov ND, Werner P, G&#246;sele U
Format: Article
Language:English
Published: SpringerOpen 2006-01-01
Series:Nanoscale Research Letters
Subjects:
73.21.Cd
73.21.La
73.40.Gk
73.63.Kv
78.67.Hc
78.67.Pt
Online Access:http://dx.doi.org/10.1007/s11671-006-9004-x

Internet

http://dx.doi.org/10.1007/s11671-006-9004-x

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