First-Principles Study of the Band Gap Structure of Oxygen-Passivated Silicon Nanonets

First-Principles Study of the Band Gap Structure of Oxygen-Passivated Silicon Nanonets

<p>Abstract</p> <p>A net-like nanostructure of silicon named silicon nanonet was designed and oxygen atoms were used to passivate the dangling bonds. First-principles calculation based on density functional theory with the generalized gradient approximation (GGA) were carried out t...

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Bibliographic Details
Main Authors: Lin Linhan, Li DeXing, Feng Jiayou
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
Silicon nanonets
Oxygen-passivated
First-principles calculation
Direct band gap
Porosity
Pore array distribution
Online Access:http://dx.doi.org/10.1007/s11671-009-9259-0

Internet

http://dx.doi.org/10.1007/s11671-009-9259-0

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