Origins of 1/<it>f </it>noise in nanostructure inclusion polymorphous silicon films
<p>Abstract</p> <p>In this article, we report that the origins of 1/<it>f </it>noise in <it>pm</it>-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, <i...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/281 |