An Optimized Structure of Split-Gate Resurf Stepped Oxide UMOSFET

An Optimized Structure of Split-Gate Resurf Stepped Oxide UMOSFET

In this paper, a split-gate resurf stepped oxide with double floating electrodes (DFSGRSO) U-shape metal oxide semiconductor field-effect transistor (UMOSFET) is proposed. The floating electrodes are symmetrically distributed on both sides of the source electrode in the trench. The performance of th...

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Bibliographic Details
Main Authors: Runze Chen, Lixin Wang, Naixia Jiu, Hongkai Zhang, Min Guo
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Electronics
Subjects:
power UMOSFET
split gate
floating electrode
electric field modulation
Online Access:https://www.mdpi.com/2079-9292/9/5/745

Internet

https://www.mdpi.com/2079-9292/9/5/745

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