An Optimized Structure of Split-Gate Resurf Stepped Oxide UMOSFET
In this paper, a split-gate resurf stepped oxide with double floating electrodes (DFSGRSO) U-shape metal oxide semiconductor field-effect transistor (UMOSFET) is proposed. The floating electrodes are symmetrically distributed on both sides of the source electrode in the trench. The performance of th...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/5/745 |