Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory

Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory

GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiO<sub>x</sub>/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N<sub>2</sub> flux ratio map was established for selective area epitaxy of...

Full description

Bibliographic Details
Main Authors: Vladislav O. Gridchin, Liliia N. Dvoretckaia, Konstantin P. Kotlyar, Rodion R. Reznik, Alesya V. Parfeneva, Anna S. Dragunova, Natalia V. Kryzhanovskaya, Vladimir G. Dubrovskii, George E. Cirlin
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Nanomaterials
Subjects:
GaN nanowires
selective area growth
molecular beam epitaxy
modeling
optical properties
Online Access:https://www.mdpi.com/2079-4991/12/14/2341

Internet

https://www.mdpi.com/2079-4991/12/14/2341

Similar Items