Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiO<sub>x</sub>/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N<sub>2</sub> flux ratio map was established for selective area epitaxy of...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/14/2341 |
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| author | Vladislav O. Gridchin Liliia N. Dvoretckaia Konstantin P. Kotlyar Rodion R. Reznik Alesya V. Parfeneva Anna S. Dragunova Natalia V. Kryzhanovskaya Vladimir G. Dubrovskii George E. Cirlin |
| author_facet | Vladislav O. Gridchin Liliia N. Dvoretckaia Konstantin P. Kotlyar Rodion R. Reznik Alesya V. Parfeneva Anna S. Dragunova Natalia V. Kryzhanovskaya Vladimir G. Dubrovskii George E. Cirlin |
| author_sort | Vladislav O. Gridchin |
| collection | DOAJ |
| description | GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiO<sub>x</sub>/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N<sub>2</sub> flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N<sub>2</sub> flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements. |
| first_indexed | 2024-03-09T06:06:53Z |
| format | Article |
| id | doaj.art-fdfaf785cc964d15beac85ae7e79a4cd |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T06:06:53Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-fdfaf785cc964d15beac85ae7e79a4cd2023-12-03T12:03:06ZengMDPI AGNanomaterials2079-49912022-07-011214234110.3390/nano12142341Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and TheoryVladislav O. Gridchin0Liliia N. Dvoretckaia1Konstantin P. Kotlyar2Rodion R. Reznik3Alesya V. Parfeneva4Anna S. Dragunova5Natalia V. Kryzhanovskaya6Vladimir G. Dubrovskii7George E. Cirlin8Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, RussiaDepartment of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, RussiaFaculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, RussiaDepartment of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, RussiaIoffe Institute, Polytechnicheskaya 26, 194021 St. Petersburg, RussiaDepartment of Physics, Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, RussiaDepartment of Physics, Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, RussiaFaculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, RussiaDepartment of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, RussiaGaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiO<sub>x</sub>/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N<sub>2</sub> flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can be obtained in a relatively narrow range of substrate temperatures and Ga/N<sub>2</sub> flux ratios. A model was developed that explains the selective growth range, which appeared to be highly sensitive to the growth temperature and Ga flux, as well as to the radius and pitch of the patterned pinholes. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.https://www.mdpi.com/2079-4991/12/14/2341GaN nanowiresselective area growthmolecular beam epitaxymodelingoptical properties |
| spellingShingle | Vladislav O. Gridchin Liliia N. Dvoretckaia Konstantin P. Kotlyar Rodion R. Reznik Alesya V. Parfeneva Anna S. Dragunova Natalia V. Kryzhanovskaya Vladimir G. Dubrovskii George E. Cirlin Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory Nanomaterials GaN nanowires selective area growth molecular beam epitaxy modeling optical properties |
| title | Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory |
| title_full | Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory |
| title_fullStr | Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory |
| title_full_unstemmed | Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory |
| title_short | Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory |
| title_sort | selective area epitaxy of gan nanowires on si substrates using microsphere lithography experiment and theory |
| topic | GaN nanowires selective area growth molecular beam epitaxy modeling optical properties |
| url | https://www.mdpi.com/2079-4991/12/14/2341 |
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