Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor

Hafnia-based ferroelectric (FE) thin films have received extensive attention in both academia and industry, benefitting from their outstanding scalability and excellent CMOS compatibility. Hafnia-based FE capacitors in particular have the potential to be used in dynamic random-access memory (DRAM) a...

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Bibliographic Details
Main Authors: Qilan Zhong, Yiwei Wang, Yan Cheng, Zhaomeng Gao, Yunzhe Zheng, Tianjiao Xin, Yonghui Zheng, Rong Huang, Hangbing Lyu
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/12/12/1436