Gate Ringing in Superjunction MOSFETs with a Parasitic Capacitance in the Load Inductor
In this paper, the origin of the gate oscillations with a stray capacitance in the load inductor is analyzed with a device/circuit mix-mode simulation. It is found that the gate ringing occurs when the superjunction device reaches its pinch-off potential (the n-pillar and the p-pillar are fully depl...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-03-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370422000268 |