Multiple current amplifier‐based gate driving for parallel operation of discrete SiC MOSFETs
Abstract The shorter switching times of silicon carbide (SiC) MOSFETs enable power converters to operate at higher frequencies than with silicon IGBTs. However, because SiC MOSFET die sizes are still relatively small, several devices have to be connected in parallel to cope with the high current rat...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-03-01
|
| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12232 |