Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride
Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF<sub>x</sub>) as the resistive switching layer are reported. The electroforming-free MgF<sub>x</sub> based RRAM devices exhibit bipolar SET/RESET operational character...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-08-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/12/9/1049 |