| Summary: | Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF<sub>x</sub>) as the resistive switching layer are reported. The electroforming-free MgF<sub>x</sub> based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10<sup>2</sup> and good data retention of >10<sup>4</sup> s. The resistive switching mechanism in the Ti/MgF<sub>x</sub>/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgF<sub>x</sub> layer. In addition, filamentary switching mode at the interface between the MgF<sub>x</sub> and Ti layers is assisted by O–H group-related defects on the surface of the active layer.
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