Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride
Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF<sub>x</sub>) as the resistive switching layer are reported. The electroforming-free MgF<sub>x</sub> based RRAM devices exhibit bipolar SET/RESET operational character...
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| Format: | Article |
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MDPI AG
2021-08-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/9/1049 |
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| author | Nayan C. Das Minjae Kim Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang |
| author_facet | Nayan C. Das Minjae Kim Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang |
| author_sort | Nayan C. Das |
| collection | DOAJ |
| description | Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF<sub>x</sub>) as the resistive switching layer are reported. The electroforming-free MgF<sub>x</sub> based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10<sup>2</sup> and good data retention of >10<sup>4</sup> s. The resistive switching mechanism in the Ti/MgF<sub>x</sub>/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgF<sub>x</sub> layer. In addition, filamentary switching mode at the interface between the MgF<sub>x</sub> and Ti layers is assisted by O–H group-related defects on the surface of the active layer. |
| first_indexed | 2024-03-10T07:26:39Z |
| format | Article |
| id | doaj.art-fe5988e3d5f847c09f3f52d587888736 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T07:26:39Z |
| publishDate | 2021-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-fe5988e3d5f847c09f3f52d5878887362023-11-22T14:15:48ZengMDPI AGMicromachines2072-666X2021-08-01129104910.3390/mi12091049Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium FluorideNayan C. Das0Minjae Kim1Jarnardhanan R. Rani2Sung-Min Hong3Jae-Hyung Jang4School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Energy Technology, Korea Institute of Energy Technology, Naju 58330, KoreaElectroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF<sub>x</sub>) as the resistive switching layer are reported. The electroforming-free MgF<sub>x</sub> based RRAM devices exhibit bipolar SET/RESET operational characteristics with an on/off ratio higher than 10<sup>2</sup> and good data retention of >10<sup>4</sup> s. The resistive switching mechanism in the Ti/MgF<sub>x</sub>/Pt devices combines two processes as well as trap-controlled space charge limited conduction (SCLC), which is governed by pre-existing defects of fluoride vacancies in the bulk MgF<sub>x</sub> layer. In addition, filamentary switching mode at the interface between the MgF<sub>x</sub> and Ti layers is assisted by O–H group-related defects on the surface of the active layer.https://www.mdpi.com/2072-666X/12/9/1049electroforming-freebipolarRRAMfilamentary switchinginterface |
| spellingShingle | Nayan C. Das Minjae Kim Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride Micromachines electroforming-free bipolar RRAM filamentary switching interface |
| title | Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride |
| title_full | Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride |
| title_fullStr | Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride |
| title_full_unstemmed | Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride |
| title_short | Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride |
| title_sort | electroforming free bipolar resistive switching memory based on magnesium fluoride |
| topic | electroforming-free bipolar RRAM filamentary switching interface |
| url | https://www.mdpi.com/2072-666X/12/9/1049 |
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