Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride

Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgF<sub>x</sub>) as the resistive switching layer are reported. The electroforming-free MgF<sub>x</sub> based RRAM devices exhibit bipolar SET/RESET operational character...

Full description

Bibliographic Details
Main Authors: Nayan C. Das, Minjae Kim, Jarnardhanan R. Rani, Sung-Min Hong, Jae-Hyung Jang
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Micromachines
Subjects:
electroforming-free
bipolar
RRAM
filamentary switching
interface
Online Access:https://www.mdpi.com/2072-666X/12/9/1049

Similar Items

Similar Items