A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL

A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL

High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconduc...

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Bibliographic Details
Main Authors: Md. Abdullah Al Humayun, AHM Zahirul Alam, Sheroz Khan, MohamedFareq AbdulMalek, Mohd Abdur Rashid
Format: Article
Language:English
Published: IIUM Press, International Islamic University Malaysia 2017-12-01
Series:International Islamic University Malaysia Engineering Journal
Online Access:http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/703

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http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/703

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