A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL
High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconduc...
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| Format: | Article |
| Language: | English |
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IIUM Press, International Islamic University Malaysia
2017-12-01
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| Series: | International Islamic University Malaysia Engineering Journal |
| Online Access: | http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/703 |
| _version_ | 1811286530354839552 |
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| author | Md. Abdullah Al Humayun AHM Zahirul Alam Sheroz Khan MohamedFareq AbdulMalek Mohd Abdur Rashid |
| author_facet | Md. Abdullah Al Humayun AHM Zahirul Alam Sheroz Khan MohamedFareq AbdulMalek Mohd Abdur Rashid |
| author_sort | Md. Abdullah Al Humayun |
| collection | DOAJ |
| description | High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature. |
| first_indexed | 2024-04-13T03:02:03Z |
| format | Article |
| id | doaj.art-fe79ea55575f4977bdab38b25ee352aa |
| institution | Directory Open Access Journal |
| issn | 1511-788X 2289-7860 |
| language | English |
| last_indexed | 2024-04-13T03:02:03Z |
| publishDate | 2017-12-01 |
| publisher | IIUM Press, International Islamic University Malaysia |
| record_format | Article |
| series | International Islamic University Malaysia Engineering Journal |
| spelling | doaj.art-fe79ea55575f4977bdab38b25ee352aa2022-12-22T03:05:24ZengIIUM Press, International Islamic University MalaysiaInternational Islamic University Malaysia Engineering Journal1511-788X2289-78602017-12-0118210.31436/iiumej.v18i2.703A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODELMd. Abdullah Al Humayun0AHM Zahirul Alam1Sheroz Khan2MohamedFareq AbdulMalek3Mohd Abdur Rashid41. International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia 2. Green University of Bangladesh, Dhaka -1207, BangladeshInternational Islamic University Malaysia, Gombak, Kuala Lumpur, MalaysiaInternational Islamic University Malaysia, Gombak, Kuala Lumpur, MalaysiaUniversity of Wollongong in Dubai, Dubai, United Arab EmiratesNoakhali Science & Technology University, Noakhali 3814, Bangladesh.High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature.http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/703 |
| spellingShingle | Md. Abdullah Al Humayun AHM Zahirul Alam Sheroz Khan MohamedFareq AbdulMalek Mohd Abdur Rashid A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL International Islamic University Malaysia Engineering Journal |
| title | A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL |
| title_full | A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL |
| title_fullStr | A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL |
| title_full_unstemmed | A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL |
| title_short | A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL |
| title_sort | comparative analysis of the effect of temperature on band gap energy of gallium nitride and its stability beyond room temperature using bose einstein model and varshni s model |
| url | http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/703 |
| work_keys_str_mv | AT mdabdullahalhumayun acomparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT ahmzahirulalam acomparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT sherozkhan acomparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT mohamedfareqabdulmalek acomparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT mohdabdurrashid acomparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT mdabdullahalhumayun comparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT ahmzahirulalam comparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT sherozkhan comparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT mohamedfareqabdulmalek comparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel AT mohdabdurrashid comparativeanalysisoftheeffectoftemperatureonbandgapenergyofgalliumnitrideanditsstabilitybeyondroomtemperatureusingboseeinsteinmodelandvarshnismodel |