A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL
High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconduc...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IIUM Press, International Islamic University Malaysia
2017-12-01
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| Series: | International Islamic University Malaysia Engineering Journal |
| Online Access: | http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/703 |