Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica

Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica

The atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaO<sub>x</sub>, InO<sub>x</sub>) was deposited using sequential dosing of trimethylgallium or trimet...

Full description

Bibliographic Details
Main Authors: Robert Baumgarten, Piyush Ingale, Kristian Knemeyer, Raoul Naumann d’Alnoncourt, Matthias Driess, Frank Rosowski
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Nanomaterials
Subjects:
atomic layer deposition
thermogravimetry
metal oxides
Ga<sub>2</sub>O<sub>3</sub>
In<sub>2</sub>O<sub>3</sub>
trimethylgallium
Online Access:https://www.mdpi.com/2079-4991/12/9/1458

Internet

https://www.mdpi.com/2079-4991/12/9/1458

Similar Items