Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end...

Full description

Bibliographic Details
Main Authors: Huansong Tang, Kuankuan Lu, Zhuohui Xu, Honglong Ning, Dengming Yao, Xiao Fu, Huiyun Yang, Dongxiang Luo, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Micromachines
Subjects:
praseodymium-doped InZnO
oxygen partial pressure
microwave photoconductivity decay
thin film transistor
Online Access:https://www.mdpi.com/2072-666X/12/9/1044

Internet

https://www.mdpi.com/2072-666X/12/9/1044

Similar Items