Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end...
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| Format: | Article |
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MDPI AG
2021-08-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/9/1044 |
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| author | Huansong Tang Kuankuan Lu Zhuohui Xu Honglong Ning Dengming Yao Xiao Fu Huiyun Yang Dongxiang Luo Rihui Yao Junbiao Peng |
| author_facet | Huansong Tang Kuankuan Lu Zhuohui Xu Honglong Ning Dengming Yao Xiao Fu Huiyun Yang Dongxiang Luo Rihui Yao Junbiao Peng |
| author_sort | Huansong Tang |
| collection | DOAJ |
| description | The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (<i>V<sub>th</sub></i>) of 1.9 V, a mobility (<i>µ<sub>sat</sub></i>) of 24.4 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, an <i>I<sub>on</sub></i>/<i>I<sub>of</sub></i><sub>f</sub> ratio of 2.03 × 10<sup>7</sup>, and a subthreshold swing (<i>SS</i>) of 0.14 V·dec<sup>−1</sup>. |
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| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T07:26:39Z |
| publishDate | 2021-08-01 |
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| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-fe96ce0fb52748c9b859c84d5c60cfdb2023-11-22T14:15:44ZengMDPI AGMicromachines2072-666X2021-08-01129104410.3390/mi12091044Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay MethodHuansong Tang0Kuankuan Lu1Zhuohui Xu2Honglong Ning3Dengming Yao4Xiao Fu5Huiyun Yang6Dongxiang Luo7Rihui Yao8Junbiao Peng9State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaGuangxi Key Lab of Agricultural Resources Chemistry and Biotechnology, Yulin Normal University, Yulin 537000, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaInstitute of Semiconductors, South China Normal University, Guangzhou 510631, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, ChinaThe praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end of the entire preparation process, which leads to the high-performance device preparation process that takes a lot of time and costs. Therefore, there is a lack of effective methods to optimize the device preparation process. In this paper, the effect of sputtering oxygen partial pressure on the properties of PrIZO thin film was studied, and the quality of PrIZO thin film was quickly evaluated by the microwave photoconductivity decay (µ-PCD) method. The μ-PCD results show that as the oxygen partial pressure increases, the peak first increases and then decreases, while the D value shows the opposite trend. The quality of PrIZO thin film prepared under 10% oxygen partial pressure is optimal due to its low localized defect states. The electric performance of PrIZO TFTs prepared under different oxygen partial pressures is consistent with the μ-PCD results. The optimal PrIZO TFT prepared under 10% oxygen partial pressure exhibits good electric performance with a threshold voltage (<i>V<sub>th</sub></i>) of 1.9 V, a mobility (<i>µ<sub>sat</sub></i>) of 24.4 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, an <i>I<sub>on</sub></i>/<i>I<sub>of</sub></i><sub>f</sub> ratio of 2.03 × 10<sup>7</sup>, and a subthreshold swing (<i>SS</i>) of 0.14 V·dec<sup>−1</sup>.https://www.mdpi.com/2072-666X/12/9/1044praseodymium-doped InZnOoxygen partial pressuremicrowave photoconductivity decaythin film transistor |
| spellingShingle | Huansong Tang Kuankuan Lu Zhuohui Xu Honglong Ning Dengming Yao Xiao Fu Huiyun Yang Dongxiang Luo Rihui Yao Junbiao Peng Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method Micromachines praseodymium-doped InZnO oxygen partial pressure microwave photoconductivity decay thin film transistor |
| title | Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method |
| title_full | Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method |
| title_fullStr | Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method |
| title_full_unstemmed | Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method |
| title_short | Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method |
| title_sort | effect of sputtering oxygen partial pressure on the praseodymium doped inzno thin film transistor using microwave photoconductivity decay method |
| topic | praseodymium-doped InZnO oxygen partial pressure microwave photoconductivity decay thin film transistor |
| url | https://www.mdpi.com/2072-666X/12/9/1044 |
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