Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

The continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the successful suppression of its leakage current to maintain desired levels of charge storage and retention. As the dimensions of stacked insul...

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Bibliographic Details
Main Authors: Heecheol Shin, Hyobin Choi, Jaeseong Lim, Wanggon Lee, Kumar Mohit, Younsoo Kim, Hyung-Suk Jung, Hanjin Lim, Hyungtak Seo
Format: Article
Language:English
Published: Taylor & Francis Group 2022-07-01
Series:Journal of Asian Ceramic Societies
Subjects:
Zirconium oxide
high-k dielectric
atomic layer deposition
interfacial properties
metal-insulator-metal capacitor
Online Access:https://www.tandfonline.com/doi/10.1080/21870764.2022.2101216

Internet

https://www.tandfonline.com/doi/10.1080/21870764.2022.2101216

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