Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties
The continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the successful suppression of its leakage current to maintain desired levels of charge storage and retention. As the dimensions of stacked insul...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2022-07-01
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| Series: | Journal of Asian Ceramic Societies |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/21870764.2022.2101216 |
| _version_ | 1811229133698498560 |
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| author | Heecheol Shin Hyobin Choi Jaeseong Lim Wanggon Lee Kumar Mohit Younsoo Kim Hyung-Suk Jung Hanjin Lim Hyungtak Seo |
| author_facet | Heecheol Shin Hyobin Choi Jaeseong Lim Wanggon Lee Kumar Mohit Younsoo Kim Hyung-Suk Jung Hanjin Lim Hyungtak Seo |
| author_sort | Heecheol Shin |
| collection | DOAJ |
| description | The continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the successful suppression of its leakage current to maintain desired levels of charge storage and retention. As the dimensions of stacked insulating dielectric and metal electrodes in the MIM capacitor are currently <10 nm, interfacial mixing has a large impact on the reliability of the capacitor. This is because defects and secondary interface oxides significantly alter the physicochemical properties of MIM capacitors. The methodology required to characterize ultrathin interfaces in relation to the performance of MIM devices is highly challenging due to its physical and chemical complexities of interface between dielectric and electrode. In this study, a ZrO2-based dielectric film and its interface (with an ultrathin TiO2/Al2O3 buffer layer) are analyzed using angle-resolved X-ray photoelectron spectroscopy (ARXPS), spectroscopic ellipsometry (SE), and temperature dependent I–V analysis for a DRAM MIM capacitor. The composite dielectric layer included either Al2O3 on the bottom or Al2O3/TiO2 between the TiN electrode and ZrO2. This study suggests an effective metrology approach to characterize ultrathin MIM capacitors and the important role of interfacial stabilization using a buffer layer for the effective control of leakage current. |
| first_indexed | 2024-04-12T10:09:29Z |
| format | Article |
| id | doaj.art-fe985d0725ef46d9bb15591c864e499e |
| institution | Directory Open Access Journal |
| issn | 2187-0764 |
| language | English |
| last_indexed | 2024-04-12T10:09:29Z |
| publishDate | 2022-07-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Asian Ceramic Societies |
| spelling | doaj.art-fe985d0725ef46d9bb15591c864e499e2022-12-22T03:37:22ZengTaylor & Francis GroupJournal of Asian Ceramic Societies2187-07642022-07-0110364965910.1080/21870764.2022.2101216Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage propertiesHeecheol Shin0Hyobin Choi1Jaeseong Lim2Wanggon Lee3Kumar Mohit4Younsoo Kim5Hyung-Suk Jung6Hanjin Lim7Hyungtak Seo8Department of Energy Systems Research, Ajou University, Suwon, Republic of KoreaDepartment of Energy Systems Research, Ajou University, Suwon, Republic of KoreaDepartment of Energy Systems Research, Ajou University, Suwon, Republic of KoreaDepartment of Energy Systems Research, Ajou University, Suwon, Republic of KoreaDepartment of Energy Systems Research, Ajou University, Suwon, Republic of KoreaProcess Development, Semiconductor R&D Center, Samsung Electronics, Samsungeonja-ro, Hwasung-si, Repulic of KoreaProcess Development, Semiconductor R&D Center, Samsung Electronics, Samsungeonja-ro, Hwasung-si, Repulic of KoreaProcess Development, Semiconductor R&D Center, Samsung Electronics, Samsungeonja-ro, Hwasung-si, Repulic of KoreaDepartment of Energy Systems Research, Ajou University, Suwon, Republic of KoreaThe continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the successful suppression of its leakage current to maintain desired levels of charge storage and retention. As the dimensions of stacked insulating dielectric and metal electrodes in the MIM capacitor are currently <10 nm, interfacial mixing has a large impact on the reliability of the capacitor. This is because defects and secondary interface oxides significantly alter the physicochemical properties of MIM capacitors. The methodology required to characterize ultrathin interfaces in relation to the performance of MIM devices is highly challenging due to its physical and chemical complexities of interface between dielectric and electrode. In this study, a ZrO2-based dielectric film and its interface (with an ultrathin TiO2/Al2O3 buffer layer) are analyzed using angle-resolved X-ray photoelectron spectroscopy (ARXPS), spectroscopic ellipsometry (SE), and temperature dependent I–V analysis for a DRAM MIM capacitor. The composite dielectric layer included either Al2O3 on the bottom or Al2O3/TiO2 between the TiN electrode and ZrO2. This study suggests an effective metrology approach to characterize ultrathin MIM capacitors and the important role of interfacial stabilization using a buffer layer for the effective control of leakage current.https://www.tandfonline.com/doi/10.1080/21870764.2022.2101216Zirconium oxidehigh-k dielectricatomic layer depositioninterfacial propertiesmetal-insulator-metal capacitor |
| spellingShingle | Heecheol Shin Hyobin Choi Jaeseong Lim Wanggon Lee Kumar Mohit Younsoo Kim Hyung-Suk Jung Hanjin Lim Hyungtak Seo Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties Journal of Asian Ceramic Societies Zirconium oxide high-k dielectric atomic layer deposition interfacial properties metal-insulator-metal capacitor |
| title | Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties |
| title_full | Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties |
| title_fullStr | Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties |
| title_full_unstemmed | Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties |
| title_short | Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties |
| title_sort | interfacial engineering of zro2 metal insulator metal capacitor using al2o3 tio2 buffer layer for improved leakage properties |
| topic | Zirconium oxide high-k dielectric atomic layer deposition interfacial properties metal-insulator-metal capacitor |
| url | https://www.tandfonline.com/doi/10.1080/21870764.2022.2101216 |
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