Desat Protection With Ultrafast Response for High-Voltage SiC MOSFETs With High <italic>dv&#x002F;dt</italic>

Desat Protection With Ultrafast Response for High-Voltage SiC MOSFETs With High <italic>dv&#x002F;dt</italic>

This article presents a desat protection scheme with the ultrafast response for high-voltage (&gt;3.3 kV) SiC MOSFETs. Its working principle is the same as the conventional desat protection designed for high-voltage SiC MOSFETs, yet its blanking time is implemented by fully considering the influ...

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Bibliographic Details
Main Authors: Xingxuan Huang, Dingrui Li, Min Lin, Leon M. Tolbert, Fred Wang, William Giewont
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Open Journal of Industry Applications
Subjects:
High-voltage SiC MOSFETs
desat protection
ultrafast response
high <named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX">$dv/dt$</tex-math> </inline-formula> </named-content>
noise immunity
Online Access:https://ieeexplore.ieee.org/document/10411019/

Internet

https://ieeexplore.ieee.org/document/10411019/

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