Desat Protection With Ultrafast Response for High-Voltage SiC MOSFETs With High <italic>dv/dt</italic>
This article presents a desat protection scheme with the ultrafast response for high-voltage (>3.3 kV) SiC MOSFETs. Its working principle is the same as the conventional desat protection designed for high-voltage SiC MOSFETs, yet its blanking time is implemented by fully considering the influ...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Open Journal of Industry Applications |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10411019/ |